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Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors | ACS Applied Materials & Interfaces
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Printed Silver Electrode for Silicon-based Schottky Barrier Diode: High Rectification Ratio Enabled by Ag/p-Si Interface Exceeds Theoretical Barrier Height | Materials Science | ChemRxiv | Cambridge Open Engage
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Crystals | Free Full-Text | Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding
